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| SSF6010 Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6010 is a new generation of middle voltage and high current N-Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF6010 is assembled in high reliability and qualified assembly house. Application: Power switching application SSF6010 TOP View (TO220) ID =60A BV=60V Rdson=10mohm Absolute Maximum Ratings Parameter ID@Tc=25 C ID@Tc=100C IDM PD@TC=25C VGS EAS EAR TJ TSTG Thermal Resistance Parameter RJC RJA Junction-to-case Junction-to-ambient Parameter BVDSS VGS(th) gfs IDSS Drain-to-Source breakdown voltage Gate threshold voltage Forward transconductance Drain-to-Source leakage current Gate-to-Source forward leakage Gate-to-Source reverse leakage RDS(on) Static Drain-to-Source on-resistance Min. 60 -- 2.0 -- -- -- -- 58 -- -- -- -- Min. -- -- Typ. -- 9 Typ. 1.25 -- Max. Units -- 10 4.0 -- 2 10 100 -100 A VGS=20V VGS=-20V V m V S Max. -- 62 Units C/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current Power dissipation Linear derating factor Gate-to-Source voltage Single pulse avalanche energy Repetitive avalanche energy Operating Junction and Storage Temperature Range Max. 60 45 240 100 0.74 20 220 TBD -55 to +150 C W W/ C V mJ A Units Electrical Characteristics @TJ=25 C(unless otherwise specified) Test Conditions VGS=0V,ID=250A VGS=10V,ID=30A VDS=VGS,ID=250A VDS=5V,ID=30A VDS=60V,VGS=0V VDS=60V, VGS=0V,TJ=150C nA IGSS (c)Silikron Semiconductor CO.,LTD. 2009.12.15 Version : 1.0 page 1of5 SSF6010 Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance -- -- -- -- -- -- -- -- -- -- 45 4.2 15 14.6 14.2 40 7.3 1480 190 135 -- -- -- -- -- -- -- -- -- -- pF nS VDD=30V ID=2A ,RL=15 RG=2.5 VGS=10V VGS=0V VDS=25V f=1.0MHZ nC ID=30A VDD=30V VGS=10V Source-Drain Ratings and Characteristics Parameter IS ISM Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Reverse Recovery Time Forward Turn-on Time . . Min. -- -- -- Typ. -- -- -- 33 61 Max. 60 A 240 1.3 -- -- V nS nC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25C,IS=40A,VGS=0V TJ=25C,IF=60A di/dt=100A/s VSD Diode Forward Voltage trr ton Qrr Reverse Recovery Charge Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: Repetitive rating; pulse width limited by max junction temperature. Test condition: L =0.3mH, VDD = 30V,Id=37A Pulse width300S, duty cycle1.5% ; RG = 25 Starting TJ = 25C EAS test circuit: BVdss Gate charge test circuit: (c)Silikron Semiconductor CO.,LTD. 2009.12.15 Version : 1.0 page 2of5 SSF6010 Switch Time Test Circuit Switch Waveforms: Transfer Characteristic Capacitance On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature (c)Silikron Semiconductor CO.,LTD. 2009.12.15 Version : 1.0 page 3of5 SSF6010 Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs Junction Temperature Transient Thermal Impedance Curve (c)Silikron Semiconductor CO.,LTD. 2009.12.15 Version : 1.0 page 4of5 SSF6010 TO220 MECHANICAL DATA: (c)Silikron Semiconductor CO.,LTD. 2009.12.15 Version : 1.0 page 5of5 |
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